Benchtop RF magnetron sputtering system for oxide, nitride, and ceramic thin film deposition. Process-configured and commissioned by Virospuk engineering team for your specific research application.
Depositing insulating, ceramic, and compound semiconductor thin films requires radio-frequency power delivery — DC sputtering simply cannot sustain stable plasma at an electrically non-conductive target surface. If your research involves transparent conducting oxides, dielectric layers, nitride coatings, or ferroelectric films, RF magnetron sputtering is the correct process. Virospuk engineers will assess your specific material and process requirements, configure the system with the appropriate RF power level, matching network, and gas delivery arrangement, and commission it at your facility.
This RF magnetron sputtering coater delivers 13.56 MHz radio-frequency power through an automatic impedance matching network — maintaining stable plasma ignition and sustained discharge across the full range of insulating target materials. The result is highly stoichiometric, dense films with excellent adhesion and uniformity across the substrate.
DC sputtering causes charge accumulation on insulating targets, leading to arcing, target damage, and film contamination. RF power alternates the target bias at 13.56 MHz, neutralising this charge every half-cycle and enabling stable, arc-free sputtering of any target material regardless of electrical conductivity. For oxide targets such as ITO, ZnO, Al₂O₃, and TiO₂, and for nitride and ceramic targets, RF magnetron sputtering is the industry-standard deposition method.
| Parameter | Specification |
|---|---|
| Deposition technique | RF magnetron sputtering (Physical Vapour Deposition) |
| RF frequency | 13.56 MHz (ISM band standard) |
| RF power supply | Up to 500 W, adjustable |
| Impedance matching | Automatic matching network — minimises reflected power continuously |
| Target diameter | 2-inch or 3-inch (specified at order) |
| Target position | Bottom target configuration |
| Sample stage | Rotatable, up to Ø 100 mm substrate |
| Ultimate base pressure | ≤ 5 × 10⁻⁶ mbar |
| Pumping system | Turbomolecular pump + rotary vane backing pump |
| Process gases | Argon (Ar); O₂ or N₂ for reactive sputtering (MFC optional) |
| Substrate compatibility | Glass, silicon, ITO glass, flexible substrates, metal foils |
| Control system | PLC touchscreen with programmable recipe storage |
| Power input | 220 V / 50 Hz single phase — Indian standard |
| Certifications | CE compliant |
| Warranty | 12 months from commissioning at your facility |
RF sputtering is compatible with conducting and non-conducting targets alike. Materials routinely deposited include: Indium Tin Oxide (ITO), Zinc Oxide (ZnO), Aluminium-doped ZnO (AZO), Aluminium Oxide (Al₂O₃), Titanium Dioxide (TiO₂), Silicon Dioxide (SiO₂), Silicon Nitride (Si₃N₄), Barium Titanate (BaTiO₃), Lead Zirconate Titanate (PZT), Lithium Niobate (LiNbO₃), PTFE, and compound semiconductors including GaN and InP.
RF sputtering process optimisation — particularly for reactive deposition of oxides in Ar/O₂ mixtures — requires careful gas flow calibration to avoid target poisoning and maintain deposition rate. Our engineers will discuss your target stoichiometry requirements, acceptable film resistivity or refractive index, and substrate temperature constraints before configuring the gas delivery and power parameters. The system is delivered with a documented first-run process record and operator training at your facility.
Describe your oxide or ceramic thin film requirement to our engineering team and we will configure the right RF sputtering process for you.
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