High-purity Tantalum (Ta) metal sputtering targets for DC reactive magnetron deposition of TaN diffusion barriers, Ta₂O₅ high-k dielectric capacitors, and pure Ta structural films. Ta is a refractory metal (melting point 3017°C) with excellent corrosion resistance and biocompatibility. Reactive sputtering in N₂ produces TaN barrier layers; in O₂ produces high-k Ta₂O₅ capacitor dielectrics — making Ta the single most important reactive sputtering metal in IC manufacturing.
Specifications
| Parameter | Value / Details |
|---|
| Material | Tantalum (Ta) — pure metal |
| Purity | 99.9% (3N) / 99.95% (3N5) / 99.99% (4N) |
| Melting Point | 3017 °C |
| Crystal Phase | α-Ta (BCC) or β-Ta — process dependent |
| Standard Sizes | Ø 50.8 mm × 3 mm / Ø 76.2 mm × 3 mm (disc) — custom sizes available |
| Custom Sizes | Large-diameter targets up to 12 inch available |
| Bonding | Cu or In backing plate bonding available on request |
| Sputtering Mode | DC magnetron (Ta) / reactive DC (TaN, Ta₂O₅) |
| Reactive Gases | N₂ for TaN / O₂ for Ta₂O₅ |
| Film Applications | IC diffusion barrier, DRAM capacitor, biomedical implant coating, MEMS |
| Packaging | Vacuum-sealed bag + foam-padded box — ICP-OES purity certificate included |
| Storage | Stable in air — surface oxide layer is self-limiting |
| Lead Time | 3–10 days (stock) / 15–25 days (custom) |
| Customization | Ta-Ru, Ta-N compound, custom purity, large-area targets |
Trade Information
| Trade Detail | Information |
|---|
| Minimum Order Quantity | 1 Piece |
| Supply Ability | 100 Pieces Per Month |
| Delivery Time | 1–3 Weeks |
| Main Domestic Market | China |
| Export Markets | Worldwide |
| Payment Terms | T/T, L/C, Western Union, PayPal |
| Packaging | Vacuum-sealed bag + foam-padded box |
| Certification | ISO 9001 — purity certificate (ICP-OES) provided |
| Storage | Cool, dry environment — reseal after use |
| Customization | Custom size, purity, shape, bonding, and alloy available |
