High-purity Tantalum Pentoxide (Ta₂O₅) sputtering targets for RF magnetron deposition of high-k gate dielectric layers (k~22–26), optical waveguide coatings, and capacitor dielectric films. Ta₂O₅ has a higher dielectric constant than SiO₂ (k~3.9) and HfO₂ (k~20), good chemical stability, and a refractive index of ~2.1 at 550 nm — making it ideal for advanced gate stacks, DRAM capacitors, and anti-reflection optical multilayers.
Specifications
| Parameter | Value / Details |
|---|
| Material | Tantalum Pentoxide (Ta₂O₅) |
| Purity | 99.9% (3N) / 99.99% (4N) |
| Dielectric Constant | k ≈ 22–26 |
| Bandgap | ~4.5 eV |
| Refractive Index | ~2.1 @ 550 nm |
| Relative Density | > 95% theoretical density |
| Standard Sizes | Ø 50.8 mm × 3 mm / Ø 76.2 mm × 3 mm (disc) — custom sizes available |
| Sputtering Method | RF magnetron sputtering |
| Process Gas | Ar / Ar + O₂ (stoichiometry control) |
| Film Applications | High-k gate dielectric, DRAM capacitor, optical waveguide, ARC |
| Packaging | Vacuum-sealed bag + foam-padded box — ICP-OES purity certificate included |
| Bonding | Cu or In backing plate bonding available on request |
| Storage | Cool, dry — slight hygroscopicity |
| Lead Time | 3–7 days (stock) / 10–20 days (custom) |
| Customization | Ta₂O₅-SiO₂ mixed targets, size, purity on request |
Trade Information
| Trade Detail | Information |
|---|
| Minimum Order Quantity | 1 Piece |
| Supply Ability | 100 Pieces Per Month |
| Delivery Time | 1–3 Weeks |
| Main Domestic Market | China |
| Export Markets | Worldwide |
| Payment Terms | T/T, L/C, Western Union, PayPal |
| Packaging | Vacuum-sealed bag + foam-padded box |
| Certification | ISO 9001 — purity certificate (ICP-OES) provided |
| Storage | Cool, dry environment — reseal after use |
| Customization | Custom size, purity, shape, bonding, and alloy available |
